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TITLE: Competitive and cost effective high-k based 28nm CMOS technology for low power applications  Full Text
AUTHORS: Arnaud, F; Thean, A; Eller, M; Lipinski, M; The, YW; Ostermayr, M; Kang, K; Kim, NS; Ohuchi, K; Han, JP; Nair, DR; Lian, J; Uchimura, S; Kohler, S; Miyaki, S; Ferreira, P ; Park, JH; Hamaguchi, M; Miyashita, K; Augur, R; Zhang, Q; Strahrenberg, K; ElGhouli, S; Bonnouvrier, J; Matsuoka, F; Lindsay, R; Sudijono, J; Johnson, FS; Ku, JH; Sekine, M; Steegen, A; Sampson, R; ...More
PUBLISHED: 2009, SOURCE: 2009 International Electron Devices Meeting, IEDM 2009 in Technical Digest - International Electron Devices Meeting, IEDM
INDEXED IN: Scopus CrossRef: 8