José Pedro de Abreu Coutinho
AuthID: R-000-8V3
71
TITLE: DFT plus U study of electrical levels and migration barriers of early 3d and 4d transition metals in silicon
AUTHORS: Marinopoulos, AG; Santos, P; Coutinho, J;
PUBLISHED: 2015, SOURCE: PHYSICAL REVIEW B, VOLUME: 92, ISSUE: 7
AUTHORS: Marinopoulos, AG; Santos, P; Coutinho, J;
PUBLISHED: 2015, SOURCE: PHYSICAL REVIEW B, VOLUME: 92, ISSUE: 7
72
TITLE: Density functional modeling of defects and impurities in silicon materials
AUTHORS: Coutinho, J;
PUBLISHED: 2015, SOURCE: 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014 in Lecture Notes in Physics, VOLUME: 916
AUTHORS: Coutinho, J;
PUBLISHED: 2015, SOURCE: 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014 in Lecture Notes in Physics, VOLUME: 916
73
TITLE: Titanium in silicon: Lattice positions and electronic properties Full Text
AUTHORS: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 104, ISSUE: 15
AUTHORS: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 104, ISSUE: 15
74
TITLE: Resonant Electronic Coupling Enabled by Small Molecules in Nanocrystal Solids Full Text
AUTHORS: Rui N Pereira; Jose Coutinho; Sabrina Niesar; Tiago A Oliveira; Willi Aigner; Hartmut Wiggers; Mark J Rayson; Patrick R Briddon; Martin S Brandt; Martin Stutzmann;
PUBLISHED: 2014, SOURCE: NANO LETTERS, VOLUME: 14, ISSUE: 7
AUTHORS: Rui N Pereira; Jose Coutinho; Sabrina Niesar; Tiago A Oliveira; Willi Aigner; Hartmut Wiggers; Mark J Rayson; Patrick R Briddon; Martin S Brandt; Martin Stutzmann;
PUBLISHED: 2014, SOURCE: NANO LETTERS, VOLUME: 14, ISSUE: 7
75
TITLE: Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions Full Text
AUTHORS: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 3
AUTHORS: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 3
76
TITLE: Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces Full Text
AUTHORS: Zhachuk, R; Teys, S; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 17
AUTHORS: Zhachuk, R; Teys, S; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 17
77
TITLE: Silicon and germanium nanocrystals: properties and characterization
AUTHORS: Capan, I; Carvalho, A; Coutinho, J;
PUBLISHED: 2014, SOURCE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 5, ISSUE: 1
AUTHORS: Capan, I; Carvalho, A; Coutinho, J;
PUBLISHED: 2014, SOURCE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 5, ISSUE: 1
78
TITLE: Defects in germanium: Theoretical aspects
AUTHORS: Carvalho, A; Coutinho, J; Jones, R;
PUBLISHED: 2012, SOURCE: Germanium: Properties, Production and Applications
AUTHORS: Carvalho, A; Coutinho, J; Jones, R;
PUBLISHED: 2012, SOURCE: Germanium: Properties, Production and Applications
INDEXED IN: 
Scopus
Scopus IN MY: 
ORCID
ORCID79
TITLE: Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
AUTHORS: Leitão, JP; Carvalho, A; Coutinho, J; Pereira, RN; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M; Lundsgaard Hansen, J; Nylandsted Larsen, A; Briddon, PR;
PUBLISHED: 2011, SOURCE: Phys. Rev. B - Physical Review B, VOLUME: 84, ISSUE: 16
AUTHORS: Leitão, JP; Carvalho, A; Coutinho, J; Pereira, RN; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M; Lundsgaard Hansen, J; Nylandsted Larsen, A; Briddon, PR;
PUBLISHED: 2011, SOURCE: Phys. Rev. B - Physical Review B, VOLUME: 84, ISSUE: 16
80
TITLE: Radiation-induced Defect Reactions in Tin-doped Ge Crystals
AUTHORS: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
AUTHORS: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
INDEXED IN: 
WOS
WOS