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Bonding Structure and Hydrogen Content in Silicon Nitride Thin Films Deposited by the Electron Cyclotron Resonance Plasma Method

AuthID
P-000-9VJ

Author(s)

Martinez, FL

Ruiz Merino, R

del Prado, A

San Andres, E

Martil, I

Gonzalez Diaz, G

Jeynes, C

Barradas, NP

Wang, L

Reehal, HS

Editor(s)

Hilgers H.Knoll W.Luth H.

Document Type

Article

Year published

2004

Published

in THIN SOLID FILMS, ISSN: 0040-6090

Volume: 459, Issue: 1-2, Pages: 203-207 (5)

Conference

8Th European Vacuum Congress (Evc-8)/2Nd Annual Conference of the German-Vacuum-Society (Dvg), Date: JUN 23-26, 2003, Location: Berlin, GERMANY, Sponsors: Natl Vacuum Soc, German Vacuum Soc

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Publication Identifiers

DOI: 10.1016/j.tsf.2003.12.084

Scopus: 2-s2.0-2942622296

Wos: WOS:000222217100046

Source Identifiers

ISSN: 0040-6090

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Bonding Structure and Hydrogen Content in Silicon Nitride Thin Films Deposited by the Electron Cyclotron Resonance Plasma Method

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Bonding Structure and Hydrogen Content in Silicon Nitride Thin Films Deposited by the Electron Cyclotron Resonance Plasma Method

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