Structure and Role of Ultrathin Aln Layers for Improving Optical Activation of Rare Earth Implanted Gan

AuthID
 P-004-KKA
8
Author(s)
Bodiou, L
·
Braud, A
·
Tipo de Documento
Article
Year published
2006
Publicado
in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972
Volume: 243, Número: 7, Páginas: 1541-1544 (4)
Conference
6Th International Conference on Nitride Semiconductors (Icns-6), Date: AUG 28-SEP 02, 2005, Location: Bremen, GERMANY
Indexing
Wos®
Scopus®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-33745759455
Wos: WOS:000238752200027
Source Identifiers
ISSN: 0370-1972
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Citações
Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

CORE Conference
No information about CORE Rank

During the preprocessing phase, only publications of type 'Proceedings Paper' or 'Proceedings' are automatically processed to identify their CORE Rank.

TIP: If your publication's CORE Rank is missing, you can contact with your institutional manager to have the correct ranking manually added to the record.

Journal Factors
Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

Full Text
Full Text @ sfx.b-on.pt

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2026 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service