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Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

AuthID
P-008-0G6

Author(s)

Markevich, VP

Peaker, AR

Hamilton, B

Litvinov, VV

Pokotilo, YM

Petukh, AN

Lastovskii, SB

Coutinho, J

Rayson, MJ

Briddon, P

Briddon, PR

Document Type

Proceedings Paper

Year published

2011

Published

in Diffusion and Defect Data Pt.B: Solid State Phenomena, ISSN: 1012-0394

Volume: 178-179, Pages: 392-397

Conference

14Th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, Gadest2011, Date: 25 September 2011 through 30 September 2011, Location: Loipersdorf

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Publication Identifiers

DOI: 10.4028/www.scientific.net/ssp.178-179.392

Scopus: 2-s2.0-80053289696

Source Identifiers

ISSN: 1012-0394

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Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

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