Gallium-Mediated Homoepitaxial Growth of Silicon at Low Temperatures

AuthID
 P-009-57F
4
Author(s)
Gallas, B
·
Berbezier, I
·
Derrien, J
Document Type
Article
Year published
1996
Published
in Physical Review B - Condensed Matter and Materials Physics, ISSN: 0163-1829
Volume: 54, Issue: 7, Pages: 4919-4925
Indexing
Scopus®
Publication Identifiers
Scopus: 2-s2.0-0039284382
Source Identifiers
ISSN: 0163-1829
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

footer slogan

Useful Links

Get Help

© 2025 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service