Gallium-Mediated Homoepitaxial Growth of Silicon at Low Temperatures

AuthID
 P-009-57F
4
Author(s)
Gallas, B
·
Berbezier, I
·
Derrien, J
Tipo de Documento
Article
Year published
1996
Publicado
in Physical Review B - Condensed Matter and Materials Physics, ISSN: 0163-1829
Volume: 54, Número: 7, Páginas: 4919-4925
Indexing
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0039284382
Source Identifiers
ISSN: 0163-1829
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