High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

AuthID
 P-00A-2RF
10
Author(s)
Valdueza Felip, S
·
Bellet Amalric, E
·
Nunez Cascajero, A
·
Wang, Y
·
Chauvat, MP
·
Ruterana, P
·
Pouget, S
·
Alves, E
·
Monroy, E
Document Type
Article
Year published
2014
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 116, Issue: 23
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Publication Identifiers
Wos: WOS:000346634500013
Source Identifiers
ISSN: 0021-8979
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