Improving Positive and Negative Bias Illumination Stress Stability in Parylene Passivated Igzo Transistors

AuthID
 P-00K-R4X
8
Author(s)
Martins, J
·
Rovisco, A
·
Tipo de Documento
Article
Year published
2016
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 109, Número: 5, Páginas: 051606 (4)
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Publication Identifiers
SCOPUS: 2-s2.0-84981155175
Wos: WOS:000383091400013
Source Identifiers
ISSN: 0003-6951
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