Toggle navigation
Publicações
Investigadores
Instituições
0
Entrar
Autenticação Federada
(Click on the image)
Autenticação local
Recuperação de Password
Register
Entrar
Publicações
Procurar
Estatísticas
Measuring Strain Caused by Ion Implantation in Gan
AuthID
P-00Q-F2N
6
Author(s)
Mendes, P
·
Lorenz, K
·
Alves, E
·
Schwaiger, S
·
Scholz, F
·
Magalhaes, S
Document Type
Article
Year published
2019
Published
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,
ISSN: 1369-8001
Volume: 98, Pages: 95-99 (5)
Indexing
Wos
®
Scopus
®
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.mssp.2019.04.001
Scopus
: 2-s2.0-85063759927
Wos
: WOS:000465188500016
Source Identifiers
ISSN
: 1369-8001
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Lista
Marked
Adicionar à lista
Marked
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service