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Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and Two Oxygen Atoms in Silicon

AuthID
P-00S-GDC

Author(s)

Markevich, VP

Murin, LI

Lastovskii, SB

Medvedeva, IF

Lindström, JL

Peaker, AR

Coutinho, J

Jones, R

Torres, VJB

Öberg, S

Briddon, PR

Document Type

Proceedings Paper

Year published

2005

Published

in Solid State Phenomena, ISSN: 1012-0394

Volume: 108-109, Pages: 273-278

Conference

11Th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, Gadest 2005, Date: 25 September 2005 through 30 September 2005, Location: Giens

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Google Scholar^®

Metadata
Sources

Publication Identifiers

DOI: 10.4028/3-908451-13-2.273

Scopus: 2-s2.0-85088334740

Source Identifiers

ISSN: 1012-0394

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Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and Two Oxygen Atoms in Silicon

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