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162

TÃTULO: In-situ study of Ni-Ti thin film growth on a TiN intermediate layer by X-ray diffraction Full Text
AUTORES: Martins, RMS ; Schell, N; Silva, RJC ; Pereira, L ; Mahesh, KK; Braz Fernandes, FMB ;
PUBLICAÇÃO: 2007, FONTE: Symposium on Functional Materials for Micro and Nanosystems in SENSORS AND ACTUATORS B-CHEMICAL, VOLUME: 126, NÚMERO: 1

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163

TÃTULO: In-situ study of Ni–Ti thin film growth on a TiN intermediate layer by X-ray diffraction Full Text
AUTORES: MARTINS, R; SCHELL, N; SILVA, R; PEREIRA, L ; MAHESH, K; FERNANDES, F;
PUBLICAÇÃO: 2007, FONTE: Sensors and Actuators B: Chemical, VOLUME: 126, NÚMERO: 1

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164

TÃTULO: Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films Full Text
AUTORES: Goncalves, G; Elangovan, E; Barquinha, P ; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLICAÇÃO: 2007, FONTE: 1st International Symposium on Transparent Conducting Oxides in THIN SOLID FILMS, VOLUME: 515, NÚMERO: 24

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165

TÃTULO: Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films Full Text
AUTORES: Gonçalves, G; Elangovan, E; Barquinha, P; Pereira, L ; Martins, R; Fortunato, E ;
PUBLICAÇÃO: 2007, FONTE: Thin Solid Films, VOLUME: 515, NÚMERO: 24

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166

TÃTULO: Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors Full Text
AUTORES: Martins, R ; Barquinha, P ; Pereira, L ; Ferreira, I ; Fortunato, E ;
PUBLICAÇÃO: 2007, FONTE: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, VOLUME: 89, NÚMERO: 1

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167

TÃTULO: Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors Full Text
AUTORES: Martins, R ; Barquinha, P ; Ferreira, I ; Pereira, L ; Goncalves, G; Fortunato, E ;
PUBLICAÇÃO: 2007, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 101, NÚMERO: 4

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168

TÃTULO: Role of the oxide layer on the performances of a-Si : H schottky structures applied to PDS fabrication
AUTORES: Hugo Aguas ; Luis Pereira ; Daniel Costa; Leandro Raniero; Elvira Fortunato ; Rodrigo Martins ;
PUBLICAÇÃO: 2007, FONTE: Symposium on Amorphous and Polycrystalline Thin-Film Silicon Science and Technology held at the 2006 MRS Spring Meeting in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, VOLUME: 910

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169

TÃTULO: A study on the electrical properties of ZnO based transparent TFTs
AUTORES: Barquinha, P ; Fortunato, E ; Goncalves, A; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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170

TÃTULO: Characterization of nanocrystalline silicon carbide films Full Text
AUTORES: Zhang, S; Pereira, L ; Hu, Z; Ranieiro, L; Fortonato, E ; Ferreira, I ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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