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TITLE: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 6
42
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
43
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: Scopus WOS
44
TITLE: Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 6
45
TITLE: Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 12
46
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef
47
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 8
48
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering  Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 8
49
TITLE: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 85
50
TITLE: Compositional dependence of the strain-free optical band gap in InxGa1-xN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 81
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