Nuno Pessoa Barradas


AuthID: R-000-DV0

Confirmed Publications: 263



171
TITLE: Artificial neural network analysis of RBS data with roughness: Application to Ti0.4Al0.6N/Mo multilayers  Full Text
AUTHORS: Ohl, G; Matias, V; Vieira, A; Barradas, NP ;
PUBLISHED: 2003, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 211, ISSUE: 2
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172
173
TITLE: Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool  Full Text
AUTHORS: Jeynes, C; Barradas, NP ; Marriott, PK; Boudreault, G; Jenkin, M; Wendler, E; Webb, RP;
PUBLISHED: 2003, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
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174
TITLE: Graded selective coatings based on chromium and titanium oxynitride  Full Text
AUTHORS: Nunes, C; Teixeira, V ; Prates, ML; Barradas, NP ; Sequeira, AD;
PUBLISHED: 2003, SOURCE: 4th International Conference on Coatings on Glass in THIN SOLID FILMS, VOLUME: 442, ISSUE: 1-2
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175
TITLE: Magnetic characterization of U/Co multilayers  Full Text
AUTHORS: Rosa, MA; Diego, M; Alves, E ; Barradas, NP ; Godinho, M ; Almeida, M ; Concalves, AP ;
PUBLISHED: 2003, SOURCE: European Conference on Physics of Magnetism in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 196, ISSUE: 1
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176
TITLE: Monte Carlo modeling of the Portuguese Research Reactor core and comparison with experimental measurements
AUTHORS: Fernandes, AC; Goncalves, IC; Barradas, NP ; Ramalho, AJ;
PUBLISHED: 2003, SOURCE: NUCLEAR TECHNOLOGY, VOLUME: 143, ISSUE: 3
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177
TITLE: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy  Full Text
AUTHORS: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLISHED: 2003, SOURCE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, ISSUE: 10A
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178
TITLE: Accurate determination of the stopping power of He-4 in Si using Bayesian inference  Full Text
AUTHORS: Barradas, NP ; Jeynes, C; Webb, RP; Wendler, E;
PUBLISHED: 2002, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 194, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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179
TITLE: Analysis of sapphire implanted with different elements using artificial neural networks  Full Text
AUTHORS: Vieira, A; Barradas, NP ; Alves, E ;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
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180
TITLE: Application of high-resolution X-ray diffraction to study strain status in Si1-xGex/Si1-yGey/Si (001) heterostructures  Full Text
AUTHORS: Chtcherbatchev, KD; Sequeira, AD; Franco, N; Barradas, NP ; Myronov, M; Mironov, OA; Parker, EHC;
PUBLISHED: 2002, SOURCE: 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 91
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Página 18 de 27. Total de resultados: 263.

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