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262

TÃTULO: Growth of concentrated GaInSb alloys with improved chemical, homogeneity at low and variable pulling rates Full Text
AUTORES: Stelian, C; Duffar, T; Mitric, A; Corregidor, V ; Alves, LC ; Barradas, NP ;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 283, NÚMERO: 1-2

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263

TÃTULO: High resolution backscattering studies of nanostructured magnetic and semiconducting materials Full Text
AUTORES: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4

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264

TÃTULO: Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb Full Text
AUTORES: Corregidor, V ; Barradas, NP ; Alves, E ; Franco, N; Alves, LC ; Chaves, PC ; Miguel A. Reis ;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4

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265

TÃTULO: Rutherford backscattering and X-ray reflectivity analysis of tunnel barriers Full Text
AUTORES: Franco, N; Yavorovskiy, IV; Fonseca, A; Gouveia, JAA; Marques, C; Alves, E ; Ferreira, RA; Freitas, PP ; Barradas, NP ;
PUBLICAÇÃO: 2005, FONTE: 8th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 240, NÚMERO: 1-2

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CrossRef: 1

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266

TÃTULO: The stopping cross-section of aluminum for He ions Full Text
AUTORES: Bianconi, M; Barradas, NP ; Correra, L;
PUBLICAÇÃO: 2005, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 239, NÚMERO: 3

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267

TÃTULO: XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates Full Text
AUTORES: Franco, N; Barradas, NP ; Alves, E ; Vallera, AM; Morris, RJH; Mironov, OA; Parker, EHC;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.

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268

TÃTULO: A general artificial neural network for analysis of RBS data of any element with Z between 18 and 83 implanted into any lighter one- or two-element target Full Text
AUTORES: Barradas, NP ; Patricio, RN; Pinho, HFR; Vieira, A;
PUBLICAÇÃO: 2004, FONTE: 16th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 219, NÚMERO: 1-4

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269

TÃTULO: Atomic environment and interfacial structural order of TiAlN/Mo multilayers Full Text
AUTORES: Tavares, CJ ; Rebouta, L ; Riviere, JP; Girardeau, T; Goudeau, P; Alves, E ; Barradas, NP ;
PUBLICAÇÃO: 2004, FONTE: SURFACE & COATINGS TECHNOLOGY, VOLUME: 187, NÚMERO: 2-3

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270

TÃTULO: Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method Full Text
AUTORES: Martinez, FL; Ruiz Merino, R; del Prado, A; San Andres, E; Martil, I; Gonzalez Diaz, G; Jeynes, C; Barradas, NP ; Wang, L; Reehal, HS;
PUBLICAÇÃO: 2004, FONTE: 8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG) in THIN SOLID FILMS, VOLUME: 459, NÚMERO: 1-2

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