291
TÍTULO: Magnetic characterization of U/Co multilayers  Full Text
AUTORES: Rosa, MA; Diego, M; Alves, E ; Barradas, NP ; Godinho, M ; Almeida, M ; Concalves, AP ;
PUBLICAÇÃO: 2003, FONTE: European Conference on Physics of Magnetism in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 196, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef
292
TÍTULO: Monte Carlo modeling of the Portuguese Research Reactor core and comparison with experimental measurements
AUTORES: Fernandes, AC; Goncalves, IC; Barradas, NP ; Ramalho, AJ;
PUBLICAÇÃO: 2003, FONTE: NUCLEAR TECHNOLOGY, VOLUME: 143, NÚMERO: 3
INDEXADO EM: Scopus WOS
293
TÍTULO: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy  Full Text
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A
INDEXADO EM: Scopus WOS CrossRef
294
TÍTULO: Accurate determination of the stopping power of He-4 in Si using Bayesian inference  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Webb, RP; Wendler, E;
PUBLICAÇÃO: 2002, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 194, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef
295
TÍTULO: Analysis of sapphire implanted with different elements using artificial neural networks  Full Text
AUTORES: Vieira, A; Barradas, NP ; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
296
TÍTULO: Application of high-resolution X-ray diffraction to study strain status in Si1-xGex/Si1-yGey/Si (001) heterostructures  Full Text
AUTORES: Chtcherbatchev, KD; Sequeira, AD; Franco, N; Barradas, NP ; Myronov, M; Mironov, OA; Parker, EHC;
PUBLICAÇÃO: 2002, FONTE: 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 91
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297
TÍTULO: Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure  Full Text
AUTORES: Gurbich, AF; Barradas, NP ; Jeynes, C; Wendler, E;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
298
TÍTULO: Artificial neural networks for automation of Rutherford backscattering spectroscopy experiments and data analysis
AUTORES: Barradas, NP ; Vieira, A; Patricio, R;
PUBLICAÇÃO: 2002, FONTE: PHYSICAL REVIEW E, VOLUME: 65, NÚMERO: 6
INDEXADO EM: Scopus WOS CrossRef
299
TÍTULO: Composition analysis of the insulating barrier in magnetic tunnel junctions by grazing angle of incidence RBS  Full Text
AUTORES: Wei, P; Barradas, NP ; Soares, JC ; da Silva, MF; Kreissig, U; Cardoso, S ; Freitas, PP ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
300
TÍTULO: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells  Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 3
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