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332

TÃTULO: Instrumentation amplifiers and voltage controlled current sources for LHC cryogenic instrumentation
AUTORES: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Martin, MA; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLICAÇÃO: 2000, FONTE: 6th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SIXTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2000, NÚMERO: 10

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333

TÃTULO: Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers Full Text
AUTORES: Veloso, A; Freitas, PP ; Wei, P; Barradas, NP ; Soares, JC ; Almeida, B ; Sousa, JB ;
PUBLICAÇÃO: 2000, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 77, NÚMERO: 7

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334

TÃTULO: Neural network analysis of Rutherford backscattering data Full Text
AUTORES: Vieira, A; Barradas, NP ;
PUBLICAÇÃO: 2000, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 170, NÚMERO: 1-2

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335

TÃTULO: Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace Full Text
AUTORES: Barradas, NP ; Parascandola, S; Sealy, BJ; Grotzschel, R; Kreissig, U;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161

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336

TÃTULO: Bayesian error analysis of Rutherford backscattering spectra Full Text
AUTORES: Barradas, NP ; Jeynes, C; Jenkin, M; Marriott, PK;
PUBLICAÇÃO: 1999, FONTE: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis in THIN SOLID FILMS, VOLUME: 343, NÚMERO: 1-2

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337

TÃTULO: Bayesian inference analysis of ellipsometry data
AUTORES: Barradas, NP ; Keddie, JL; Sackin, R;
PUBLICAÇÃO: 1999, FONTE: PHYSICAL REVIEW E, VOLUME: 59, NÚMERO: 5

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338

TÃTULO: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
AUTORES: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2

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339

TÃTULO: Electrical behaviour associated with defect tails in germanium implanted silicon
AUTORES: Nejim, A; Gwilliam, RM; Emerson, NG; Knights, AP; Cristiano, F; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 1

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340

TÃTULO: Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD Full Text
AUTORES: Toal, SJ; Reehal, HS; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: Symposium on Surface Processing - Laser, Lamp, Plasma, at the Annual Spring Meeting of the European-Materials-Society (E-MRS 96) in APPLIED SURFACE SCIENCE, VOLUME: 138, NÚMERO: 1-4

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