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Pedro Nuno Mendonça dos Santos
AuthID:
R-000-F2R
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Article (9)
Proceedings Paper (7)
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Confirmed Publications: 16
1
TITLE:
An equivalent doping profile for CMOS substrate characterization
Full Text
AUTHORS:
Henrique J Quaresma
;
Mendonca dos Santos, PM
;
Cruz Serra, AC
;
PUBLISHED:
2013
,
SOURCE:
SOLID-STATE ELECTRONICS,
VOLUME:
79
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
2
TITLE:
A design methodology for integrated inductor-based DC-DC converters
Full Text
AUTHORS:
Vitor Costa
;
Pedro Mendonca dos Santos
;
Beatriz Borges
;
PUBLISHED:
2012
,
SOURCE:
MICROELECTRONICS JOURNAL,
VOLUME:
43,
ISSUE:
6
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
3
TITLE:
Impact of temperature on substrate coupling in low-doped substrate
Full Text
AUTHORS:
Quaresma, HJ
;
dos Santos, PM
;
Serra, AC
;
PUBLISHED:
2011
,
SOURCE:
ELECTRONICS LETTERS,
VOLUME:
47,
ISSUE:
23
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
4
TITLE:
Design Method for Monolithic DC-DC Converters Based on the Losses Optimization of the Power Stage
AUTHORS:
Vitor Costa
;
Pedro M Santos
;
Beatriz Borges
;
PUBLISHED:
2008
,
SOURCE:
IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2008)
in
2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
5
TITLE:
Electronic state spectroscopy of c-C5F8 explored by photoabsorption, electron impact, photoelectron spectroscopies and ab initio calculations
AUTHORS:
Limao Vieira, P
; Duflot, D; Giuliani, A;
Vasekova, E
;
Lourenco, JMC
;
Santos, PM
; Hoffman, SV; Mason, NJ;
Delwiche, J
;
Hubin Franskin, MJ
;
PUBLISHED:
2008
,
SOURCE:
JOURNAL OF PHYSICAL CHEMISTRY A,
VOLUME:
112,
ISSUE:
13
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
6
TITLE:
A smart power integrated circuit educational tool
AUTHORS:
Saulo Finco;
Wellington Melo
; Fernando Castaldo; Jose Pomilio;
Beatriz Vieira Borges
;
Pedro Santos
;
PUBLISHED:
2007
,
SOURCE:
IEEE TRANSACTIONS ON POWER ELECTRONICS,
VOLUME:
22,
ISSUE:
4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
7
TITLE:
High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35 mu m CMOS process
Full Text
AUTHORS:
Santos, PM
;
Vitor Costa
;
Gomes, MC
;
Beatriz Borges
;
Mario Lanca
;
PUBLISHED:
2007
,
SOURCE:
MICROELECTRONICS JOURNAL,
VOLUME:
38,
ISSUE:
1
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
8
TITLE:
A methodology for extracting unknown integrated circuit process parameters
AUTHORS:
Quaresma, HJ
;
Santos, PM
;
Serra, AC
; Sicard, E;
PUBLISHED:
2005
,
SOURCE:
12th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2005
in
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
INDEXED IN:
Scopus
CrossRef
IN MY:
ORCID
9
TITLE:
High-voltage NMOS design in fully implanted twin-well CMOS
Full Text
AUTHORS:
Santos, PM
;
Quaresma, H
;
Silva, AP
;
Lanca, M
;
PUBLISHED:
2004
,
SOURCE:
MICROELECTRONICS JOURNAL,
VOLUME:
35,
ISSUE:
9
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
10
TITLE:
High-voltage solutions in CMOS technology
Full Text
AUTHORS:
Santos, PM
; Casimiro, AP; Lanca, M; Simas, MIC;
PUBLISHED:
2002
,
SOURCE:
MICROELECTRONICS JOURNAL,
VOLUME:
33,
ISSUE:
8
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
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