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281

TÃTULO: Time resolved photoluminescence of cubic Mg doped GaN
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Schoettker, B; Frey, T; As, DJ; Schikora, D; Lischka, K;
PUBLICAÇÃO: 1999, FONTE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572

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282

TÃTULO: Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN Full Text
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLICAÇÃO: 1998, FONTE: 2nd International Conference on Nitride Semiconductors (ICNS 97) in JOURNAL OF CRYSTAL GROWTH, VOLUME: 189

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283

TÃTULO: Blue emission in Mg doped GaN studied by time resolved spectroscopy
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 2

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284

TÃTULO: Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire Full Text
AUTORES: Monteiro, T ; Pereira, E; Correia, MR ; Xavier, C; Hofmann, DM; Meyer, BK; Fischer, S; Cremades, A; Piqueras, J;
PUBLICAÇÃO: 1997, FONTE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4

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285

TÃTULO: Temperature behaviour of the yellow emission in GaN
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLICAÇÃO: 1997, FONTE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 2, NÚMERO: 33-41

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286

TÃTULO: 2.2 eV luminescence in GaN
AUTORES: Hofmann, DM; Kovalev, D; Steude, G; Volm, D; Meyer, BK; Xavier, C; Monteiro, T ; Pereira, E; Mokov, EN; Amano, H; Akasaki, I;
PUBLICAÇÃO: 1996, FONTE: 1st International Symposium on Gallium Nitride and Related Materials in GALLIUM NITRIDE AND RELATED MATERIALS, VOLUME: 395

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287

TÃTULO: Cathodoluminescence study of GaN epitaxial layers Full Text
AUTORES: Cremades, A; Piqueras, J; Xavier, C; Monteiro, T ; Pereira, E; Meyer, BK; Hofmann, DM; Fischer, S;
PUBLICAÇÃO: 1996, FONTE: 4th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 42, NÚMERO: 1-3

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288

TÃTULO: PHOTOLUMINESCENCE STUDIES OF HEAT-TREATED GAP-S SAMPLES
AUTORES: MONTEIRO, T ; PEREIRA, E; DOMINGUEZADAME, F; PIQUERAS, J;
PUBLICAÇÃO: 1993, FONTE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 140, NÚMERO: 12

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289