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TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: WOS
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TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: Journal of Physics Condensed Matter, VOLUME: 17, ISSUE: 22
INDEXED IN: Scopus CrossRef
IN MY: ORCID
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TITLE: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 19
IN MY: ORCID
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TITLE: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys  Full Text
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID