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161

TÃTULO: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTORES: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E ; Neves, AJ; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 178

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162

TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in alpha-Al2O3 single crystal implanted with Mg ions Full Text
AUTORES: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E ;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379

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163

TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al<inf>2</inf>O<inf>3</inf> single crystal implanted with Mg ions
AUTORES: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E. ;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379

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164

TÃTULO: Composition measurement of epitaxial ScxGa1-xN films Full Text
AUTORES: Tsui, HCL; Goff, LE; Barradas, NP ; Alves, E ; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLICAÇÃO: 2016, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, NÚMERO: 6

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165

TÃTULO: Correction to "Spectroscopic Analysis of Eu 3+ Implanted and Annealed GaN Layers and Nanowires"
AUTORES: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E ; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2016, FONTE: Journal of Physical Chemistry C, VOLUME: 120, NÚMERO: 12

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166

TÃTULO: Deposition in the inner and outer corners of the JET divertor with carbon wall and metallic ITER-like wall
AUTORES: Beal, J; Widdowson, A; Heinola, K; Baron-Wiechec, A; Gibson, KJ; Coad, JP; Alves, E ; Lipschultz, B; Kirschner, A; Esser, HG; Matthews, GF; Brezinsek, S; JET Contributors, ;
PUBLICAÇÃO: 2016, FONTE: 15th International Conference on Plasma-Facing Materials and Components for Fusion Applications (PFMC) in PHYSICA SCRIPTA, VOLUME: T167, NÚMERO: T167

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167