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312

TÃTULO: Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies Full Text
AUTORES: Kaminska, A; Ma, CG; Brik, MG; Kozanecki, A; Bockowski, M; Alves, E ; Suchocki, A;
PUBLICAÇÃO: 2012, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 24, NÚMERO: 9

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313

TÃTULO: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTORES: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: EPL, VOLUME: 97, NÚMERO: 6

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314

TÃTULO: High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTORES: Magalhaes, S; Barradas, NP ; Alves, E ; Watson, IM; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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315

TÃTULO: High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTORES: Magalhães, S; N.P Barradas; Alves, E ; I.M Watson; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273

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316

TÃTULO: High pressure annealing of Europium implanted GaN
AUTORES: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLICAÇÃO: 2012, FONTE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262

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317

TÃTULO: Incorporation of N in TiO2 films grown by DC-reactive magnetron sputtering Full Text
AUTORES: Sério, S; M.E Melo Jorge; Nunes, Y ; N.P Barradas; Alves, E ; Munnik, F;
PUBLICAÇÃO: 2012, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273

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318

TÃTULO: Incorporation of N in TiO2 films grown by DC-reactive magnetron sputtering Full Text
AUTORES: Serio, S ; Melo Jorge, MEM ; Nunes, Y ; Barradas, NP ; Alves, E ; Munnik, F;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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319

TÃTULO: Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
AUTORES: Pinto, SRC; Buljan, M; Marques, L ; Martin Sanchez, J; Conde, O ; Chahboun, A ; Ramos, AR ; Barradas, NP ; Alves, E ; Bernstorff, S; Grenzer, J; Mucklich, A; Ramos, MMD ; Gomes, MJM ;
PUBLICAÇÃO: 2012, FONTE: NANOTECHNOLOGY, VOLUME: 23, NÚMERO: 40

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320

TÃTULO: Investigation of generation of defects due to metallization on CdZnTe detectors Full Text
AUTORES: Zheng, Q; Dierre, F; Franc, J; Crocco, J; Bensalah, H; Corregidor, V ; Alves, E ; Ruiz, E; Vela, O; Perez, JM; Dieguez, E;
PUBLICAÇÃO: 2012, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 45, NÚMERO: 17

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