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472

TÃTULO: Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots Full Text
AUTORES: Bodiou, L; Braud, A; L Doualan; Moncorge, R; Park, JH; Munasinghe, C; Steckl, AJ; Lorenz, K ; Alves, E ; Daudin, B;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, NÚMERO: 4

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473

TÃTULO: Phase transitions in erbium-doped silicon exposed to laser radiation Full Text
AUTORES: Batalov, RI; Bayazitov, RM; Kryzhkov, DI; Gajduk, PI; Gatskevich, EI; Ivlev, GD; Marques, CP; Alves, E ;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF APPLIED SPECTROSCOPY, VOLUME: 76, NÚMERO: 2

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474

TÃTULO: Photosensitivity of nanocrystalline ZnO films grown by PLD Full Text
AUTORES: Ayouchi, R ; Bentes, L; Casteleiro, C; Conde, O ; Marques, CP; Alves, E ; Moutinho, AMC ; Marques, HP; Teodoro, O ; Schwarz, R ;
PUBLICAÇÃO: 2009, FONTE: APPLIED SURFACE SCIENCE, VOLUME: 255, NÚMERO: 11

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475

TÃTULO: Radiation damage in ZnO ion implanted at 15 K Full Text
AUTORES: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2009, FONTE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, NÚMERO: 16

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476

TÃTULO: Role of impurities and dislocations for the unintentional n-type conductivity in InN Full Text
AUTORES: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 22

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477

TÃTULO: Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AUTORES: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLICAÇÃO: 2009, FONTE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, NÚMERO: 10

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478

TÃTULO: Stable In-defect complexes in GaN and AlN Full Text
AUTORES: Schmitz, J; Niederhausen, J; Penner, J; Lorenz, K ; Alves, E ; Vianden, R;
PUBLICAÇÃO: 2009, FONTE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 23-24

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479

TÃTULO: Stopping Power of Different Ions in Si Measured with a Bulk Sample Method and Bayesian Inference Data Analysis Full Text
AUTORES: Barradas, NP ; Alves, E ; Siketić, Z; Bogdanović B Radović; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2009, FONTE: 20th International Conference on Application of Accelerators in Research and Industry in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, VOLUME: 1099

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