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582

TÃTULO: Compositional and structural changes in ZrOxNy films depending on growth condition Full Text
AUTORES: Carvalho, P; Fernandes, AC; Rebouta, L ; Vaz, F ; Cunha, L ; Kreissig, U; Barradas, NP ; Ramos, AR ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.

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583

TÃTULO: Damage behaviour of GaAs/AlAs multilayer structures Full Text
AUTORES: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2

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584

TÃTULO: Damage behaviour of GaAs/AlAs multilayer structures Full Text
AUTORES: Magalhaes, S; Fonseca, A; Franco, N; Barradas, NP ; Sobolev, N; Hey, R; Grahn, H; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.

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585

TÃTULO: Defect production in neutron irradiated GaN Full Text
AUTORES: Marques, JG ; Lorenz, K ; Franco, N; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.

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586

TÃTULO: Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence Full Text
AUTORES: Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; Katchkanov, V; Trager Cowan, C; O'Donnell, KP; Watson, IM; Matias, V; Vantomme, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6

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587

TÃTULO: Diffusion processes in seeded and unseeded SBT thin films with varied stoichiometry Full Text
AUTORES: Aguilar, GG ; Wu, A; Miguel A. Reis ; Ramos, AR ; Salvado, IMM ; Alves, E ; Costa, MEV ;
PUBLICAÇÃO: 2006, FONTE: SURFACE SCIENCE, VOLUME: 600, NÚMERO: 9

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588

TÃTULO: Effect of annealing temperature on luminescence in Eu implanted GaN Full Text
AUTORES: Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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589

TÃTULO: Effect of the matrix on the 1.5 mu m photoluminescence of Er-doped silicon quantum dots
AUTORES: Cerqueira, MF ; Stepikhova, M; Losurdo, M; Monteiro, T ; Soares, MJ ; Peres, M; Neves, A ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2

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