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752

TÃTULO: Processing of rare earth doped GaN with ion beams
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLICAÇÃO: 2003, FONTE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798

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753

TÃTULO: Radiation-damage recovery in undoped and oxidized Li doped MgO crystals implanted with lithium ions Full Text
AUTORES: Alves, E ; da Silva, RC; Pinto, JV ; Monteiro, T ; Savoini, B; Caceres, D; Gonzalez, R; Chen, Y;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206

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754

TÃTULO: Raman study of the A(1)(LO) phonon in relaxed and pseudomorphic InGaN epilayers Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Alves, E ;
PUBLICAÇÃO: 2003, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 83, NÚMERO: 23

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CrossRef: 37

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755

TÃTULO: Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition Full Text
AUTORES: Liu, C; Matsutani, T; Asanuma, T; Murai, K; Kiuchi, M; Alves, E ; Miguel A. Reis ;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 93, NÚMERO: 4

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756

TÃTULO: Structural and optical studies of Co and Ti implanted sapphire Full Text
AUTORES: Alves, E ; Marques, C; da Silva, RC; Monteiro, T ; Soares, J ; McHargue, C; Ononye, LC; Allard, LF;
PUBLICAÇÃO: 2003, FONTE: 104th Meeting of the American-Ceramic-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 207, NÚMERO: 1

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757

TÃTULO: Structural characterisation of SiC/SiCf composites exposed to chemical interaction with Be at high temperature Full Text
AUTORES: Paul, A; Alves, LC ; Alves, E ; Riccardi, B;
PUBLICAÇÃO: 2003, FONTE: 22nd Symposium on Fusion Technology in FUSION ENGINEERING AND DESIGN, VOLUME: 69, NÚMERO: 1-4

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758

TÃTULO: Structural characterisation of SiC/SiCf composites exposed to chemical interaction with Be at high temperature Full Text
AUTORES: Paúl, A; L.C Alves; Alves, E ; Riccardi, B;
PUBLICAÇÃO: 2003, FONTE: Fusion Engineering and Design, VOLUME: 69, NÚMERO: 1-4

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759

TÃTULO: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy Full Text
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A

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760

TÃTULO: Three-step amorphisation process in ion-implanted GaN at 15 K Full Text
AUTORES: Wendler, E; Kamarou, A; Alves, E ; Gartner, K; Wesch, W;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206

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