ProfileOfResearchers

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ORCID |

762

TÃTULO: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1

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CrossRef: 6

NO MEU:

ORCID |

763

TÃTULO: Conductivity behaviour of Cr implanted TiO2 Full Text
AUTORES: da Silva, RC; Alves, E ; Cruz, MM ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4

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ORCID |

764

TÃTULO: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1

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Scopus

WOS

CrossRef: 3

NO MEU:

ORCID |

765

TÃTULO: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing Full Text
AUTORES: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 16

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CrossRef: 12

NO MEU:

ORCID |

766

TÃTULO: Effects of ion bombardment on properties of d.c. sputtered superhard (Ti, Si, Al)N nanocomposite coatings Full Text
AUTORES: Ribeiro, E; Malczyk, A; Carvalho, S ; Rebouta, L ; Fernandes, JV ; Alves, E ; Miranda, AS ;
PUBLICAÇÃO: 2002, FONTE: Spring Meeting of the European-Materials-Research-Society in SURFACE & COATINGS TECHNOLOGY, VOLUME: 151

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WOS

CrossRef: 64

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ORCID |

767

TÃTULO: Effects of ion implantation on the thermoluminescent properties of natural colourless topaz Full Text
AUTORES: Souza, DN; Lima, JF; Valerio, MEG; Alves, E ; Caldas, LVE;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4

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NO MEU:

ORCID |

768

TÃTULO: Electrical conductivity of MgO crystals implanted with lithium ions Full Text
AUTORES: Tardı́o, M; Ramı́rez, R; González, R; Chen, Y; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 191, NÚMERO: 1-4

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ORCID |

769

TÃTULO: Electrical conductivity of MgO crystals implanted with lithium ions Full Text
AUTORES: Tardio, M; Ramirez, R; Gonzalez, R; Chen, Y; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4

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NO MEU:

ResearcherID

770

TÃTULO: Elemental characterisation of beryllium and electrical behaviour of their pebbles beds Full Text
AUTORES: Alves, E ; da Silva, MR ; Alves, LC ; Scaffidi Argentina, F; Soares, JC;
PUBLICAÇÃO: 2002, FONTE: 10th International Conference on Fusion Reactor Materials (ICFRM-10) in JOURNAL OF NUCLEAR MATERIALS, VOLUME: 307, NÚMERO: 1 SUPPL.

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ORCID |