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792

TÃTULO: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 7

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CrossRef: 85

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793

TÃTULO: Structural development in hard Si-based TIN coatings as a function of temperature: a comprehensive study in vacuum and in air
AUTORES: Vaz, F ; Rebouta, L ; Carvalho, S ; Rocha, LA ; Soares, D ; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 3rd International Symposium on Nitrides in NITRIDES AND OXYNITRIDES 2, VOLUME: 383

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CrossRef: 2

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794

TÃTULO: Study of calcium implanted GaN Full Text
AUTORES: Alves, E ; Liu, C; Lopes, EB ; da Silva, MF; Soares, JC ; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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795

TÃTULO: Study of roughness in Ti0.4Al0.6N/Mo multilayer structures Full Text
AUTORES: Tavares, CJ ; Rebouta, L ; Alves, E ; Barradas, NP ; Pacaud, J; Riviere, JP;
PUBLICAÇÃO: 2002, FONTE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, NÚMERO: 1-4

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796

TÃTULO: Surface quality studies of high-T-c superconductors of the Hg-, Tl- and HgxTl1-x-families: RBS and resonant C and O backscattering studies Full Text
AUTORES: Vantomme, A; Alves, E ; Correia, JG ; Bryntse, I; Johansson, LG; Loureiro, SM; Le Floch, S; Toulemonde, P; Bordet, P; Bougerol Chaillout, C;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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797

TÃTULO: The structure of sapphire implanted with nitrogen at room temperature and 1000 degrees C Full Text
AUTORES: McHargue, C; Ononye, LC; Allard, LF; Alves, E ; da Silva, MF; Soares, JC ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4

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798

TÃTULO: Amorphization of GaN by ion implantation Full Text
AUTORES: Liu, C; Wenzel, A; Rauschenbach, B; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Fan, XJ;
PUBLICAÇÃO: 2001, FONTE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, NÚMERO: 1-4

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799

TÃTULO: Artificial neural network analysis of RBS data of Er-implanted sapphire Full Text
AUTORES: Barradas, NP ; Vieira, A; Alves, E ;
PUBLICAÇÃO: 2001, FONTE: 12th International Conference on Ion Beam Modification of Materials (IBMM2000) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 175

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