ProfileOfResearchers

872

TÃTULO: Radioactive isotope identifications of Au and Pt photoluminescence centres in silicon Full Text
AUTORES: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLICAÇÃO: 1998, FONTE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, NÚMERO: 2

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

873

TÃTULO: Solubility and damage annealing of Er implanted single crystalline alpha-Al2O3 Full Text
AUTORES: Alves, E ; da Silva, RC; da Silva, MF; Soares, JC ;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

874

TÃTULO: Etching of amorphous Al2O3 produced by ion implantation Full Text
AUTORES: McHargue, CJ; Hunn, JD; Joslin, DL; Alves, E ; daSilva, MF; Soares, JC ;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

875

TÃTULO: Lattice site and photoluminescence of erbium implanted in alpha-A1(2)O(3)
AUTORES: vandenHoven, GN; Polman, A; Alves, E ; daSilva, MF; Melo, AA; Soares, JC ;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 12, NÚMERO: 5

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

876

TÃTULO: Lattice site and photoluminescence of erbium implanted in α–Al2O3
AUTORES: van den Hoven, GN; Polman, A; Alves, E ; da F d Silva; Melo, AA; Soares, JC;
PUBLICAÇÃO: 1997, FONTE: Journal of Materials Research - J. Mater. Res., VOLUME: 12, NÚMERO: 05

INDEXADO EM:

NO MEU:

ORCID |

877

TÃTULO: Microscopic studies of implanted As-73 in diamond Full Text
AUTORES: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

878

TÃTULO: Selective area vapor-phase epitaxy and structural properties of Hg1-xCdxTe on sapphire Full Text
AUTORES: Sochinskii, NV; Munoz, V; Bernardi, S; Espeso, JI; Alves, E ; daSilva, MF; Soares, JC ; Marin, C; Dieguez, E;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 179, NÚMERO: 3-4

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

879

TÃTULO: Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy Full Text
AUTORES: Sochinskii, NV; Munoz, V; Bellani, V; Vina, L; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S;
PUBLICAÇÃO: 1997, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 70, NÚMERO: 10

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

880

TÃTULO: The photoluminescence of Pt-implanted silicon
AUTORES: Alves, E ; Bollmann, J; Deicher, M; Carmo, MC; Henry, MO; Knopf, MHA; Leitao, JP ; Magerle, R; McDonagh, CJ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 1

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |