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892

TÃTULO: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As
AUTORES: Alves, E ; Da Silva, MF; Melo, AA; Soares, JC ; Van Den Hoven, GN; Polman, A; Evans, KR; Jones, CR;
PUBLICAÇÃO: 1993, FONTE: Proceedings of the 1993 Materials Society Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 301

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893

TÃTULO: LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES Full Text
AUTORES: ALVES, E ; DASILVA, MF; EVANS, KR; JONES, CR; MELO, AA; SOARES, JC ;
PUBLICAÇÃO: 1993, FONTE: 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 80-1, NÚMERO: PART 1

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894

TÃTULO: Lattice location of Er in GaAs and Al0.5Ga0.5As layers grown by MBE on (100) GaAs substrates Full Text
AUTORES: Alves, E ; M.F da Silva; K.R Evans; C.R Jones; A.A Melo; J.C Soares;
PUBLICAÇÃO: 1993, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 80-81

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895

TÃTULO: Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon Full Text
AUTORES: Alves, E ; M.F Da Silva; J.C Soares; A.A Melo; May, J; Haslar, V; Seidl, P; Feuser, U; Vianden, R;
PUBLICAÇÃO: 1991, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 55, NÚMERO: 1-4

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896

TÃTULO: EPITAXIAL REGROWTH AND LATTICE LOCATION OF INDIUM IMPLANTED IN ARSENIC-PREAMORPHIZED SILICON Full Text
AUTORES: ALVES, E ; DASILVA, MF; SOARES, JC ; MELO, AA; MAY, J; HASLAR, V; SEIDL, P; FEUSER, U; VIANDEN, R;
PUBLICAÇÃO: 1991, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 55, NÚMERO: 1-4

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897

TÃTULO: LATTICE SITE LOCATION AND OUTDIFFUSION OF MERCURY IMPLANTED IN GAAS Full Text
AUTORES: SOARES, JC ; MELO, AA; ALVES, E ; DASILVA, MF; GILLIN, WP; SEALY, BJ;
PUBLICAÇÃO: 1991, FONTE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, NÚMERO: PART 2

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898

TÃTULO: Lattice site location and outdiffusion of mercury implanted in GaAs Full Text
AUTORES: J.C Soares; A.A Melo; Alves, E ; M.F da Silva; W.P Gillin; B.J Sealy;
PUBLICAÇÃO: 1991, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60

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899

TÃTULO: VACANCY ACCEPTOR COMPLEXES IN GERMANIUM PRODUCED BY ION-IMPLANTATION Full Text
AUTORES: FEUSER, U; VIANDEN, R; ALVES, E ; DASILVA, MF; SZILAGYI, E; PASZTI, F; SOARES, JC ;
PUBLICAÇÃO: 1991, FONTE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, NÚMERO: PART 2

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900

TÃTULO: Vacancy-acceptor complexes in germanium produced by ion implantation Full Text
AUTORES: Feuser, U; Vianden, R; Alves, E ; M.F da Silva; Szilágyi, E; Pászti, F; J.C Soares;
PUBLICAÇÃO: 1991, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60

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