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192

TÃTULO: Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties Full Text
AUTORES: Lorenz, K ; Magalhaes, S; Franco, N; Barradas, NP ; Darakchieva, V; Alves, E ; Pereira, S ; Correia, MR ; Munnik, F; Martin, RW; O'Donnell, KP; Watson, IM;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7

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193

TÃTULO: An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices Full Text
AUTORES: Kessler, P; Lorenz, K ; Miranda, SMC; Correia, JG ; Johnston, K; Vianden, R;
PUBLICAÇÃO: 2010, FONTE: 3rd Joint International Conference on Hyperfine Interactions (HFI) / International Symposium on Nuclear Quadrupole Interactions (NQI) in HYPERFINE INTERACTIONS, VOLUME: 197, NÚMERO: 1-3

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194

TÃTULO: Defect studies and optical activation of Yb doped GaN Full Text
AUTORES: Lorenz, K ; Alves, E ; Magalhes, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, MEG;
PUBLICAÇÃO: 2010, FONTE: 16th International Conference on Defects in Insulating Materials, ICDIM2008 in Journal of Physics: Conference Series, VOLUME: 249, NÚMERO: 1

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195

TÃTULO: Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN Full Text
AUTORES: Redondo Cubero, A ; Lorenz, K ; Gago, R; Franco, N; di Forte D Poisson; Alves, E ; Munoz, E;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 43, NÚMERO: 5

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196

TÃTULO: Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN Full Text
AUTORES: Redondo-Cubero, A; Lorenz, K ; Gago, R; Franco, N; M-A di Forte Poisson; Alves, E ; Muñoz, E;
PUBLICAÇÃO: 2010, FONTE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 43, NÚMERO: 5

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197

TÃTULO: Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures Full Text
AUTORES: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, NÚMERO: 10-11

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198

TÃTULO: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTORES: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, NÚMERO: 8

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199

TÃTULO: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTORES: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLICAÇÃO: 2010, FONTE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, NÚMERO: 8

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200

TÃTULO: High temperature annealing of Europium implanted AlN Full Text
AUTORES: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19

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