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252

TÃTULO: Cathodoluminescence of rare earth implanted AlInN Full Text
AUTORES: Wang, K; Martin, RW; Nogales, E; Edwards, PR; O'Donnell, KP; Lorenz, K ; Alves, E ; Watson, IM;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 89, NÚMERO: 13

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253

TÃTULO: Characterization of the blue emission of Tm/Er co-implanted GaN
AUTORES: Roqan, IS; Trager Cowan, C; Hourahine, B; Lorenz, K ; Nogales, E; O'Donnell, KP; Martin, RW; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: 2005 Materials Research Society Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 892

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254

TÃTULO: Defect production in neutron irradiated GaN Full Text
AUTORES: Marques, JG ; Lorenz, K ; Franco, N; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.

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255

TÃTULO: Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence Full Text
AUTORES: Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; Katchkanov, V; Trager Cowan, C; O'Donnell, KP; Watson, IM; Matias, V; Vantomme, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6

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256

TÃTULO: Effect of annealing temperature on luminescence in Eu implanted GaN Full Text
AUTORES: Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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257

TÃTULO: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing Full Text
AUTORES: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 3

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258

TÃTULO: High temperature annealing of rare earth implanted GaN films: Structural and optical properties Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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259

TÃTULO: Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
AUTORES: Lorenz, K ; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E ; Martin, RW; O'Donnell, KP;
PUBLICAÇÃO: 2006, FONTE: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting in GaN, AIN, InN and Related Materials, VOLUME: 892

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260

TÃTULO: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTORES: Hernandez, S; Cusco, R; Artus, L; Nogales, E; Martin, RW; O'Donnell, KP; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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