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272

TÃTULO: Effect of annealing temperature on luminescence in Eu implanted GaN Full Text
AUTORES: Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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273

TÃTULO: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing Full Text
AUTORES: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 3

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274

TÃTULO: High temperature annealing of rare earth implanted GaN films: Structural and optical properties Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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275

TÃTULO: Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
AUTORES: Lorenz, K ; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E ; Martin, RW; O'Donnell, KP;
PUBLICAÇÃO: 2006, FONTE: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting in GaN, AIN, InN and Related Materials, VOLUME: 892

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276

TÃTULO: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTORES: Hernandez, S; Cusco, R; Artus, L; Nogales, E; Martin, RW; O'Donnell, KP; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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277

TÃTULO: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTORES: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7

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278

TÃTULO: Optical and structural studies in Eu-implanted AlN films Full Text
AUTORES: Peres, M; Cruz, A; Soares, MJ ; Neves, AJ ; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6

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279

TÃTULO: Optical doping of AlN by rare earth implantation Full Text
AUTORES: Lorenz, K ; Alves, E ; Monteiro, T ; Soares, MJ ; Peres, M; Smulders, PJM;
PUBLICAÇÃO: 2006, FONTE: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 242, NÚMERO: 1-2

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280

TÃTULO: Optical properties of high-temperature annealed Eu-implanted GaN Full Text
AUTORES: Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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