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292

TÃTULO: Dopants in semiconductors studied by perturbed angular correlation
AUTORES: Bartels, J; Lorenz, K ; Ruske, F; Tessema, G; Vianden, R;
PUBLICAÇÃO: 2001, FONTE: 36th Zakopane-School-of-Physics International Symposium on Condensed Matter Studies with Nuclear Methods in ACTA PHYSICA POLONICA A, VOLUME: 100, NÚMERO: 5

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293

TÃTULO: Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
AUTORES: Wruck, D; Lorenz, K ; Vianden, R; Reinhold, B; Mahnke, HE; Baranowski, JM; Pakula, K; Parthier, L; Henneberger, F;
PUBLICAÇÃO: 2001, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 16, NÚMERO: 11

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294

TÃTULO: Optical doping of nitrides by ion implantation Full Text
AUTORES: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2001, FONTE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, NÚMERO: 28-29

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295

TÃTULO: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION Full Text
AUTORES: ALVES, E ; LORENZ, K ; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T ;
PUBLICAÇÃO: 2001, FONTE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, NÚMERO: 28n29

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296

TÃTULO: Photoluminescence and lattice location of Eu and Pr implanted GaN samples Full Text
AUTORES: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLICAÇÃO: 2001, FONTE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308

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297

TÃTULO: Defect trapping and annealing for transition metal implants in group III nitrides
AUTORES: Lorenz, K ; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM;
PUBLICAÇÃO: 2000, FONTE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 5, NÚMERO: 5

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298

TÃTULO: RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates Full Text
AUTORES: Lorenz, K ; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E ;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161

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