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311

TÃTULO: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION Full Text
AUTORES: ALVES, E ; LORENZ, K ; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T ;
PUBLICAÇÃO: 2001, FONTE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, NÚMERO: 28n29

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312

TÃTULO: Photoluminescence and lattice location of Eu and Pr implanted GaN samples Full Text
AUTORES: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLICAÇÃO: 2001, FONTE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308

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313

TÃTULO: Defect trapping and annealing for transition metal implants in group III nitrides
AUTORES: Lorenz, K ; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM;
PUBLICAÇÃO: 2000, FONTE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 5, NÚMERO: 5

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314

TÃTULO: RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates Full Text
AUTORES: Lorenz, K ; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E ;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161

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