Virginia Chu
AuthID: R-000-HJ2
171
TITLE: Steady state and transient transport in a-Si, Ge : H, F alloys Full Text
AUTHORS: Aljishi, S; Chu, V; Z.E Smith; D.S Shen; J.P Conde; Slobodin, D; Kolodzey, J;
PUBLISHED: 1987, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 97-98
AUTHORS: Aljishi, S; Chu, V; Z.E Smith; D.S Shen; J.P Conde; Slobodin, D; Kolodzey, J;
PUBLISHED: 1987, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 97-98
INDEXED IN: 
CrossRef
CrossRef172
TITLE: Thermal-equilibrium defect processes in hydrogenated amorphous silicon
AUTHORS: Smith, ZE; Aljishi, S; Slobodin, D; Chu, V; Wagner, S; Lenahan, PM; Arya, RR; Bennett, MS;
PUBLISHED: 1986, SOURCE: Physical Review Letters, VOLUME: 57, ISSUE: 19
AUTHORS: Smith, ZE; Aljishi, S; Slobodin, D; Chu, V; Wagner, S; Lenahan, PM; Arya, RR; Bennett, MS;
PUBLISHED: 1986, SOURCE: Physical Review Letters, VOLUME: 57, ISSUE: 19
173
TITLE: MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si,Ge:H,F ALLOYS.
AUTHORS: Kolodzey, J; Aljishi, S; Smith, ZE; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Kolodzey, J; Aljishi, S; Smith, ZE; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
INDEXED IN: 
Scopus
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ORCID
ORCID174
TITLE: ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS.
AUTHORS: Aljishi, S; Smith, ZE; Slobodin, D; Kolodzey, J; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Aljishi, S; Smith, ZE; Slobodin, D; Kolodzey, J; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
INDEXED IN: Scopus
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ORCID175
TITLE: INTERNAL PHOTOEMISSION MEASUREMENTS FOR THE DETERMINATION OF SCHOTTKY BARRIER HEIGHT ON a-Si,Ge:H,F ALLOYS.
AUTHORS: Chu, V; Aljishi, S; Slobodin, D; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Chu, V; Aljishi, S; Slobodin, D; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID176
TITLE: A-SI//1- //X GE//X :H, F ALLOYS PREPARED BY DC AND RF GLOW DISCHARGE DEPOSITION.
AUTHORS: Slobodin, D; Kolodzey, J; Aljishi, S; Okada, Y; Chu, V; Shen, DS; Schwarz, R; Wagner, S;
PUBLISHED: 1985, SOURCE: Conference Record of the Eighteenth IEEE Photovoltaic Specialists Conference - 1985. in Conference Record of the IEEE Photovoltaic Specialists Conference
AUTHORS: Slobodin, D; Kolodzey, J; Aljishi, S; Okada, Y; Chu, V; Shen, DS; Schwarz, R; Wagner, S;
PUBLISHED: 1985, SOURCE: Conference Record of the Eighteenth IEEE Photovoltaic Specialists Conference - 1985. in Conference Record of the IEEE Photovoltaic Specialists Conference
INDEXED IN: Scopus
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ORCID