121
TÍTULO: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments  Full Text
AUTORES: Lopez, I; Lorenz, K; Nogales, E; Mendez, B; Piqueras, J; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 49, NÚMERO: 3
INDEXADO EM: Scopus WOS
122
TÍTULO: Sequential multiple-step europium ion implantation and annealing of GaN. Sequential multiple-step europium ion implantation and annealing of GaN  Full Text
AUTORES: Miranda, SMC; Edwards, PR; O'Donnell, KP; Bockowski, M; Alves, E; Roqan, IS; Vantomme, A; Lorenz, K;
PUBLICAÇÃO: 2014, FONTE: E-MRS Spring Meeting / Symposium J - Semicond Nanostructures towards Elect and Optoelectron Device Applicat - IV / Symposium L - Grp III Nitrides / Symposium P - Funct Nanowires - Synth, Characterizat and Applicat in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, VOLUME: 11, NÚMERO: 2
INDEXADO EM: Scopus WOS CrossRef
123
TÍTULO: Europium-doped GaN(Mg): beyond the limits of the light-emitting diode. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode  Full Text
AUTORES: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E; Bockowski, M;
PUBLICAÇÃO: 2014, FONTE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, NÚMERO: 3-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
124
TÍTULO: Doping of Ga2O3 bulk crystals and NWs by ion implantation
AUTORES: Lorenz, K; Peres, M; Felizardo, M ; Correia, JG; Alves, LC; Alves, E; Lopez, I; Nogales, E; Mendez, B; Piqueras, J; Barbosa, MB; Araujo, JP ; Goncalves, JN; Rodrigues, J; Rino, L; Monteiro, T; Villora, EG; Shimamura, K;
PUBLICAÇÃO: 2014, FONTE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXADO EM: Scopus WOS CrossRef: 11
125
TÍTULO: ZnO micro/nanocrystals grown by Laser Assisted Flow Deposition
AUTORES: Rodrigues, J; Fernandes, AJS; Mata, D; Holz, T; Carvalho, RG; Fath F Allah; Ben, T; Gonzalez, D; Silva, RF; da Cunha, AF; Correia, MR; Alves, LC; Lorenz, K; Neves, AJ; Costa, FM; Monteiro, T;
PUBLICAÇÃO: 2014, FONTE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXADO EM: Scopus WOS CrossRef
126
TÍTULO: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTORES: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K; Li, HN; O'Connell, J; Alves, E; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, NÚMERO: 29
INDEXADO EM: Scopus WOS CrossRef
127
TÍTULO: High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3  Full Text
AUTORES: Muhammed, MM; Peres, M; Yamashita, Y; Morishima, Y; Sato, S; Franco, N; Lorenz, K; Kuramata, A; Roqan, IS;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 105, NÚMERO: 4
INDEXADO EM: Scopus WOS CrossRef
128
TÍTULO: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review (vol 53, 060901, 2014)
AUTORES: Jose G Marques; Katharina Lorenz;
PUBLICAÇÃO: 2014, FONTE: OPTICAL ENGINEERING, VOLUME: 53, NÚMERO: 6
INDEXADO EM: WOS
129
TÍTULO: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTORES: Marques, JG; Lorenz, K;
PUBLICAÇÃO: 2014, FONTE: OPTICAL ENGINEERING, VOLUME: 53, NÚMERO: 6
INDEXADO EM: WOS CrossRef
130
TÍTULO: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTORES: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K; Piqueras, J; Alves, E;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, NÚMERO: 35
INDEXADO EM: Scopus WOS CrossRef
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