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Influence of the Doping on the Lattice Sites of Fe in Si
AuthID
P-009-W4Y
4
Author(s)
Silva, DJ
·
Wahl, U
·
Correia, JG
·
Araujo, JP
2
Editor(s)
Cavallini,A;Estreicher,SK
Document Type
Proceedings Paper
Year published
2014
Published
in
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013
in
AIP Conference Proceedings,
ISSN: 0094-243X
Volume: 1583, Pages: 24-27 (4)
Conference
27Th International Conference on Defects in Semiconductors (Icds),
Date:
JUL 21-26, 2013,
Location:
Bologna, ITALY,
Sponsors:
Fraunhofer Inst Solar Energy, Univ Bologna, Dept Phys & Astron, Enrico Fermi Ctr
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DOI
:
10.1063/1.4865597
Scopus
: 2-s2.0-85026288712
Wos
: WOS:000342321600005
Source Identifiers
ISSN
: 0094-243X
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