Influence of the Doping on the Lattice Sites of Fe in Si

AuthID
 P-009-W4Y
4
Author(s)
2
Editor(s)
Cavallini,A;Estreicher,SK
Document Type
Proceedings Paper
Year published
2014
Published
in INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 in AIP Conference Proceedings, ISSN: 0094-243X
Volume: 1583, Pages: 24-27 (4)
Conference
27Th International Conference on Defects in Semiconductors (Icds), Date: JUL 21-26, 2013, Location: Bologna, ITALY, Sponsors: Fraunhofer Inst Solar Energy, Univ Bologna, Dept Phys & Astron, Enrico Fermi Ctr
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Publication Identifiers
Scopus: 2-s2.0-85026288712
Wos: WOS:000342321600005
Source Identifiers
ISSN: 0094-243X
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