Electronic Structural Details of Donor-Vacancy Complexes in Si-Doped Ge and Ge-Doped Si

AuthID
 P-003-92P
6
Author(s)
Castro, F
·
Document Type
Article
Year published
2010
Published
in THIN SOLID FILMS, ISSN: 0040-6090
Volume: 518, Issue: 9, Pages: 2381-2385 (5)
Conference
Symposium on Silicon and Germanium Issues for Future Cmos Devices Held at the 2009 E-Mrs Spring Meeting, Date: JUN 08-12, 2009, Location: Strasbourg, FRANCE, Sponsors: European Mat Res Soc
Indexing
Wos®
Scopus®
Crossref®2
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-76049101338
Wos: WOS:000275615100021
Source Identifiers
ISSN: 0040-6090
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service