ProfileOfResearchers

892

TITLE: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As
AUTHORS: Alves, E ; Da Silva, MF; Melo, AA; Soares, JC ; Van Den Hoven, GN; Polman, A; Evans, KR; Jones, CR;
PUBLISHED: 1993, SOURCE: Proceedings of the 1993 Materials Society Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 301

INDEXED IN:

Scopus

IN MY:

ORCID |

893

TITLE: LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES Full Text
AUTHORS: ALVES, E ; DASILVA, MF; EVANS, KR; JONES, CR; MELO, AA; SOARES, JC ;
PUBLISHED: 1993, SOURCE: 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 80-1, ISSUE: PART 1

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

894

TITLE: Lattice location of Er in GaAs and Al0.5Ga0.5As layers grown by MBE on (100) GaAs substrates Full Text
AUTHORS: Alves, E ; M.F da Silva; K.R Evans; C.R Jones; A.A Melo; J.C Soares;
PUBLISHED: 1993, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 80-81

INDEXED IN:

IN MY:

ORCID |

895

TITLE: Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon Full Text
AUTHORS: Alves, E ; M.F Da Silva; J.C Soares; A.A Melo; May, J; Haslar, V; Seidl, P; Feuser, U; Vianden, R;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 55, ISSUE: 1-4

INDEXED IN:

IN MY:

ORCID |

896

TITLE: EPITAXIAL REGROWTH AND LATTICE LOCATION OF INDIUM IMPLANTED IN ARSENIC-PREAMORPHIZED SILICON Full Text
AUTHORS: ALVES, E ; DASILVA, MF; SOARES, JC ; MELO, AA; MAY, J; HASLAR, V; SEIDL, P; FEUSER, U; VIANDEN, R;
PUBLISHED: 1991, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 55, ISSUE: 1-4

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

897

TITLE: LATTICE SITE LOCATION AND OUTDIFFUSION OF MERCURY IMPLANTED IN GAAS Full Text
AUTHORS: SOARES, JC ; MELO, AA; ALVES, E ; DASILVA, MF; GILLIN, WP; SEALY, BJ;
PUBLISHED: 1991, SOURCE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, ISSUE: PART 2

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

898

TITLE: Lattice site location and outdiffusion of mercury implanted in GaAs Full Text
AUTHORS: J.C Soares; A.A Melo; Alves, E ; M.F da Silva; W.P Gillin; B.J Sealy;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60

INDEXED IN:

IN MY:

ORCID |

899

TITLE: VACANCY ACCEPTOR COMPLEXES IN GERMANIUM PRODUCED BY ION-IMPLANTATION Full Text
AUTHORS: FEUSER, U; VIANDEN, R; ALVES, E ; DASILVA, MF; SZILAGYI, E; PASZTI, F; SOARES, JC ;
PUBLISHED: 1991, SOURCE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, ISSUE: PART 2

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

900

TITLE: Vacancy-acceptor complexes in germanium produced by ion implantation Full Text
AUTHORS: Feuser, U; Vianden, R; Alves, E ; M.F da Silva; Szilágyi, E; Pászti, F; J.C Soares;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60

INDEXED IN:

IN MY:

ORCID |