ProfileOfResearchers

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152

TITLE: Cd ion implantation in AlN Full Text
AUTHORS: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289

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153

TITLE: Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLISHED: 2012, SOURCE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396

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154

TITLE: Damage formation and recovery in Fe implanted 6H-SiC Full Text
AUTHORS: Miranda, P; Wahl, U ; Catarino, N; Lorenz, K ; Correia, JG ; Alves, E ;
PUBLISHED: 2012, SOURCE: 16th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 286

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155

TITLE: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342

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156

TITLE: Doped gallium oxide nanowires for photonics
AUTHORS: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K ; Alves, E ; Garcia, JA;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263

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157

TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6

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158

TITLE: High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTHORS: Magalhaes, S; Barradas, NP ; Alves, E ; Watson, IM; Lorenz, K ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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159

TITLE: High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTHORS: Magalhães, S; N.P Barradas; Alves, E ; I.M Watson; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273

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160

TITLE: High pressure annealing of Europium implanted GaN
AUTHORS: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLISHED: 2012, SOURCE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262

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