Patrick R. Briddon
AuthID: R-006-MRG
71
TITLE: Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: 
Scopus 
WOS
Scopus WOS72
TITLE: Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
AUTHORS: Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindstrom, JL; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindstrom, JL; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
Scopus WOS73
TITLE: Theoretical investigations of the energy levels of defects in germanium
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
Scopus WOS74
TITLE: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTHORS: Carvalho, A; Jones, R; Coutinho, J; Torres, VJB; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
AUTHORS: Carvalho, A; Jones, R; Coutinho, J; Torres, VJB; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
INDEXED IN: Scopus
Scopus75
TITLE: Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
AUTHORS: Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindström, JL; Peaker, AR; Coutinho, J; Jones, R; Torres, VJB; Öberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
AUTHORS: Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindström, JL; Peaker, AR; Coutinho, J; Jones, R; Torres, VJB; Öberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
INDEXED IN: Scopus
Scopus76
TITLE: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys Full Text
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
77
TITLE: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
78
TITLE: Optically active erbium-oxygen complexes in GaAs Full Text
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
79
TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
80
TITLE: Ab initio modeling of N-H, P-H and As-H defects in ZnSe Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
