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332

TÃTULO: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
AUTORES: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2

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333

TÃTULO: Electrical behaviour associated with defect tails in germanium implanted silicon
AUTORES: Nejim, A; Gwilliam, RM; Emerson, NG; Knights, AP; Cristiano, F; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 1

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334

TÃTULO: Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD Full Text
AUTORES: Toal, SJ; Reehal, HS; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: Symposium on Surface Processing - Laser, Lamp, Plasma, at the Annual Spring Meeting of the European-Materials-Society (E-MRS 96) in APPLIED SURFACE SCIENCE, VOLUME: 138, NÚMERO: 1-4

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335

TÃTULO: High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
AUTORES: Barradas, NP ; Knights, AP; Jeynes, C; Mironov, OA; Grasby, TJ; Parker, EHC;
PUBLICAÇÃO: 1999, FONTE: PHYSICAL REVIEW B, VOLUME: 59, NÚMERO: 7

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336

TÃTULO: Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films Full Text
AUTORES: Cappellani, A; Keddie, JL; Barradas, NP ; Jackson, SM;
PUBLICAÇÃO: 1999, FONTE: Symposium on Materials and Processes for Submicron Technologies, at the E-MRS Spring Meeting in SOLID-STATE ELECTRONICS, VOLUME: 43, NÚMERO: 6

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337

TÃTULO: Rapid accurate automated analysis of complex ion beam analysis data
AUTORES: Marriott, PK; Jenkin, M; Jeynes, C; Barradas, NP ; Webb, RP; Sealy, BJ;
PUBLICAÇÃO: 1999, FONTE: 15th International Conference on the Application of Accelerators in Research and Industry in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2, VOLUME: 475

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338

TÃTULO: RBS/simulated annealing and FTIR characterisation of BCN films deposited by dual cathode magnetron sputtering
AUTORES: Barradas, NP ; Jeynes, C; Kusano, Y; Evetts, JE; Hutchings, IM;
PUBLICAÇÃO: 1999, FONTE: 15th International Conference on the Application of Accelerators in Research and Industry in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2, VOLUME: 475

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339

TÃTULO: RES and ERDA study of ion beam synthesised amorphous gallium nitride Full Text
AUTORES: Barradas, NP ; Almeida, SA; Jeynes, C; Knights, AP; Silva, SRP; Sealy, BJ;
PUBLICAÇÃO: 1999, FONTE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, NÚMERO: 1-4

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340

TÃTULO: Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy Full Text
AUTORES: Knights, AP; Nejim, A; Barradas, NP ; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, NÚMERO: 1-4

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