Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Publicações Confirmadas: 274



251
TÍTULO: A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
AUTORES: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLICAÇÃO: 2000, FONTE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
INDEXADO EM: Scopus WOS
252
TÍTULO: Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire  Full Text
AUTORES: Alves, E ; da Silva, MF; Soares, JC ; Monteiro, T ; Soares, J; Santos, L;
PUBLICAÇÃO: 2000, FONTE: 10th International Conference on Radioation Effects in Insulators (REI-10) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 166
INDEXADO EM: Scopus WOS CrossRef Handle
253
TÍTULO: Optical and electrical characterisation of iron-doped ZnO
AUTORES: Gaspar, C; Pereira, L ; Costa, FM; Monteiro, T ; Han, J; Senos, AMR; Mantas, P;
PUBLICAÇÃO: 2000, FONTE: 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, VOLUME: 2000-January
INDEXADO EM: Scopus CrossRef
NO MEU: ORCID | CIÊNCIAVITAE
254
TÍTULO: Steady-state and time-resolved luminescence in InGaN layers  Full Text
AUTORES: Seitz, R; Gaspar, C; Correia, M ; Monteiro, T ; Pereira, E; Heuken, M; Schoen, O;
PUBLICAÇÃO: 2000, FONTE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 87-9
INDEXADO EM: Scopus WOS CrossRef Handle
255
TÍTULO: Electrical and photoelectronic properties of hexagonal GaN  Full Text
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L; Pereira, E; Schon, O; Heuken, M;
PUBLICAÇÃO: 1999, FONTE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef Handle
256
TÍTULO: Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Poisson, MA; Beaumont, B;
PUBLICAÇÃO: 1999, FONTE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXADO EM: Scopus WOS
NO MEU: ORCID | ResearcherID | CIÊNCIAVITAE
257
TÍTULO: Strain distribution in GaN hexagons measured by Raman spectroscopy  Full Text
AUTORES: Seitz, R; Monteiro, T ; Pereira, E; di Forte Poisson, M;
PUBLICAÇÃO: 1999, FONTE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 216, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 1 Handle
258
TÍTULO: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTORES: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLICAÇÃO: 1999, FONTE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, NÚMERO: 1
INDEXADO EM: WOS CrossRef Handle
259
TÍTULO: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTORES: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) in Physica Status Solidi (A) Applied Research, VOLUME: 176, NÚMERO: 1
INDEXADO EM: Scopus CrossRef
260
TÍTULO: Time resolved photoluminescence of cubic Mg doped GaN
AUTORES: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Schoettker, B; Frey, T; As, DJ; Schikora, D; Lischka, K;
PUBLICAÇÃO: 1999, FONTE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXADO EM: Scopus WOS
NO MEU: ORCID | ResearcherID | CIÊNCIAVITAE
Página 26 de 28. Total de resultados: 274.

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