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752

TÃTULO: Structural and optical studies of Co and Ti implanted sapphire Full Text
AUTORES: Alves, E ; Marques, C; da Silva, RC; Monteiro, T ; Soares, J ; McHargue, C; Ononye, LC; Allard, LF;
PUBLICAÇÃO: 2003, FONTE: 104th Meeting of the American-Ceramic-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 207, NÚMERO: 1

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753

TÃTULO: Structural characterisation of SiC/SiCf composites exposed to chemical interaction with Be at high temperature Full Text
AUTORES: Paul, A; Alves, LC ; Alves, E ; Riccardi, B;
PUBLICAÇÃO: 2003, FONTE: 22nd Symposium on Fusion Technology in FUSION ENGINEERING AND DESIGN, VOLUME: 69, NÚMERO: 1-4

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754

TÃTULO: Structural characterisation of SiC/SiCf composites exposed to chemical interaction with Be at high temperature Full Text
AUTORES: Paúl, A; L.C Alves; Alves, E ; Riccardi, B;
PUBLICAÇÃO: 2003, FONTE: Fusion Engineering and Design, VOLUME: 69, NÚMERO: 1-4

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755

TÃTULO: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy Full Text
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A

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756

TÃTULO: Three-step amorphisation process in ion-implanted GaN at 15 K Full Text
AUTORES: Wendler, E; Kamarou, A; Alves, E ; Gartner, K; Wesch, W;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206

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757

TÃTULO: Analysis of sapphire implanted with different elements using artificial neural networks Full Text
AUTORES: Vieira, A; Barradas, NP ; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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758

TÃTULO: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1

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759

TÃTULO: Conductivity behaviour of Cr implanted TiO2 Full Text
AUTORES: da Silva, RC; Alves, E ; Cruz, MM ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4

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