Sangaraju Venkata Jagadeesh Chandra
AuthID: R-000-T4H
1
TITLE: Investigations on Compositional, Structural and Optical Properties of Thermally Oxidized HfO2 Films
AUTHORS: Venkataiah, S; Chandra, SVJ; Babu, MV; Uthanna, S;
PUBLISHED: 2021, SOURCE: ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
AUTHORS: Venkataiah, S; Chandra, SVJ; Babu, MV; Uthanna, S;
PUBLISHED: 2021, SOURCE: ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
INDEXED IN: 
Scopus 
WOS
Scopus WOS2
TITLE: Substrate temperature influenced ZrO2 films for MOS devices Full Text
AUTHORS: Paruchuri Kondaiah; Jagadish V J Chandra; Elvira Fortunato; Choi Chel Jong; Mohan M Rao; Rama Koti K Reddy; Uthanna, S;
PUBLISHED: 2020, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 52, ISSUE: 9
AUTHORS: Paruchuri Kondaiah; Jagadish V J Chandra; Elvira Fortunato; Choi Chel Jong; Mohan M Rao; Rama Koti K Reddy; Uthanna, S;
PUBLISHED: 2020, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 52, ISSUE: 9
INDEXED IN: Scopus WOS
Scopus WOS3
TITLE: Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors Full Text
AUTHORS: Chandra C Sekhar; Kondaiah, P; Mohan M Rao; Jagadeesh V J Chandra; Uthanna, S;
PUBLISHED: 2013, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 62
AUTHORS: Chandra C Sekhar; Kondaiah, P; Mohan M Rao; Jagadeesh V J Chandra; Uthanna, S;
PUBLISHED: 2013, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 62
4
TITLE: Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric. Physical properties of Silicon MOS devices with TiO2 gate dielectric Full Text
AUTHORS: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLISHED: 2012, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, ISSUE: 9
AUTHORS: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLISHED: 2012, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, ISSUE: 9
5
TITLE: Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices Full Text
AUTHORS: Jagadeesh V J Chandra; Fortunato, E ; Martins, R ; Chel Jong Choi;
PUBLISHED: 2012, SOURCE: THIN SOLID FILMS, VOLUME: 520, ISSUE: 14
AUTHORS: Jagadeesh V J Chandra; Fortunato, E ; Martins, R ; Chel Jong Choi;
PUBLISHED: 2012, SOURCE: THIN SOLID FILMS, VOLUME: 520, ISSUE: 14
6
TITLE: Influence of substrate bias voltage on the physical, electrical and dielectric properties of RF magnetron sputtered TiO 2 films Full Text
AUTHORS: Kondaiah, P; Sekhar, MC; Chandra, SVJ; Martins, R ; Uthanna, S; Elangovan, E;
PUBLISHED: 2012, SOURCE: European Materials Research Society (EMRS) Fall Meeting 2011 Symposium K: Solution-Derived Electronic-Oxide Films Nanostructures and Patterning, from Materials to Devices in IOP Conference Series: Materials Science and Engineering, VOLUME: 30, ISSUE: 1
AUTHORS: Kondaiah, P; Sekhar, MC; Chandra, SVJ; Martins, R ; Uthanna, S; Elangovan, E;
PUBLISHED: 2012, SOURCE: European Materials Research Society (EMRS) Fall Meeting 2011 Symposium K: Solution-Derived Electronic-Oxide Films Nanostructures and Patterning, from Materials to Devices in IOP Conference Series: Materials Science and Engineering, VOLUME: 30, ISSUE: 1
INDEXED IN: Scopus 
CrossRef
Scopus CrossRef7
TITLE: The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)(0.85)(TiO2)(0.15) films Full Text
AUTHORS: Chandra C Sekhar; Uthanna, S; Martins, R ; Jagadeesh Chandra, SVJ; Elangovan, E;
PUBLISHED: 2012, SOURCE: Symposium I on Advances in Transparent Electronics, from Materials to Devices III/Fall Meeting of the European-Materials-Research-Society (E-MRS) in E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III, VOLUME: 34, ISSUE: 1
AUTHORS: Chandra C Sekhar; Uthanna, S; Martins, R ; Jagadeesh Chandra, SVJ; Elangovan, E;
PUBLISHED: 2012, SOURCE: Symposium I on Advances in Transparent Electronics, from Materials to Devices III/Fall Meeting of the European-Materials-Research-Society (E-MRS) in E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III, VOLUME: 34, ISSUE: 1
