Sérgio Manuel Costa Miranda
AuthID: R-001-SH6
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TÃTULO: Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering Full Text
AUTORES: Lorenz, K ; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: ACTA MATERIALIA, VOLUME: 61, NÚMERO: 9
AUTORES: Lorenz, K ; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: ACTA MATERIALIA, VOLUME: 61, NÚMERO: 9
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TÃTULO: A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions Full Text
AUTORES: Rodrigues, J; Miranda, SMC; Peres, M; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Daudin, B; Mendez, B; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
AUTORES: Rodrigues, J; Miranda, SMC; Peres, M; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Daudin, B; Mendez, B; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
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TÃTULO: Cd ion implantation in AlN Full Text
AUTORES: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289
AUTORES: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289
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TÃTULO: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTORES: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: EPL, VOLUME: 97, NÚMERO: 6
AUTORES: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: EPL, VOLUME: 97, NÚMERO: 6
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TÃTULO: High pressure annealing of Europium implanted GaN
AUTORES: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLICAÇÃO: 2012, FONTE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262
AUTORES: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLICAÇÃO: 2012, FONTE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262
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TÃTULO: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTORES: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
AUTORES: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
INDEXADO EM: 
Scopus 
CrossRef
Scopus CrossRef7
TÃTULO: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study Full Text
AUTORES: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
AUTORES: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
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TÃTULO: Radiation damage formation and annealing in GaN and ZnO
AUTORES: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLICAÇÃO: 2011, FONTE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
AUTORES: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLICAÇÃO: 2011, FONTE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXADO EM: Scopus 
WOS
Scopus WOS9
TÃTULO: An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices Full Text
AUTORES: Kessler, P; Lorenz, K ; Miranda, SMC; Correia, JG ; Johnston, K; Vianden, R;
PUBLICAÇÃO: 2010, FONTE: 3rd Joint International Conference on Hyperfine Interactions (HFI) / International Symposium on Nuclear Quadrupole Interactions (NQI) in HYPERFINE INTERACTIONS, VOLUME: 197, NÚMERO: 1-3
AUTORES: Kessler, P; Lorenz, K ; Miranda, SMC; Correia, JG ; Johnston, K; Vianden, R;
PUBLICAÇÃO: 2010, FONTE: 3rd Joint International Conference on Hyperfine Interactions (HFI) / International Symposium on Nuclear Quadrupole Interactions (NQI) in HYPERFINE INTERACTIONS, VOLUME: 197, NÚMERO: 1-3
