1
TITLE: Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering  Full Text
AUTHORS: Lorenz, K; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLISHED: 2013, SOURCE: ACTA MATERIALIA, VOLUME: 61, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
2
TITLE: A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions  Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Peres, M; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Daudin, B; Mendez, B; Lorenz, K ; Monteiro, T;
PUBLISHED: 2013, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
INDEXED IN: Scopus WOS CrossRef: 5
3
TITLE: Cd ion implantation in AlN  Full Text
AUTHORS: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289
INDEXED IN: Scopus WOS CrossRef
4
TITLE: Rare earth co-doping nitride layers for visible light  Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Santos, NF; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 134, ISSUE: 2-3
INDEXED IN: Scopus WOS CrossRef: 10
5
TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
6
TITLE: High pressure annealing of Europium implanted GaN
AUTHORS: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLISHED: 2012, SOURCE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262
INDEXED IN: Scopus WOS CrossRef
7
TITLE: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
INDEXED IN: Scopus CrossRef
8
TITLE: Rapid thermal annealing of rare earth implanted ZnO epitaxial layers  Full Text
AUTHORS: Miranda, SMC; Peres, M; Monteiro, T ; Alves, E ; Sun, HD; Geruschke, T; Vianden, R; Lorenz, K ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 18
9
TITLE: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study  Full Text
AUTHORS: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
INDEXED IN: Scopus WOS CrossRef
10
TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXED IN: Scopus WOS
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