Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
101
TÃTULO: Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties
AUTORES: Paul Grey; Luis Pereira ; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato ;
PUBLICAÇÃO: 2016, FONTE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTORES: Paul Grey; Luis Pereira ; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato ;
PUBLICAÇÃO: 2016, FONTE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
102
TÃTULO: Oxide TFTs on Flexible Substrates for Designing and Fabricating Analog-to-Digital Converters
AUTORES: Ana Correia; Joao Goes; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTORES: Ana Correia; Joao Goes; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
103
TÃTULO: InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass
AUTORES: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato ; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, NÚMERO: 4
AUTORES: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato ; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, NÚMERO: 4
104
TÃTULO: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTORES: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E ; Martins, R;
PUBLICAÇÃO: 2016, FONTE: Applied Surface Science, VOLUME: 379
AUTORES: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E ; Martins, R;
PUBLICAÇÃO: 2016, FONTE: Applied Surface Science, VOLUME: 379
105
TÃTULO: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTORES: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLICAÇÃO: 2016, FONTE: APPLIED SURFACE SCIENCE, VOLUME: 379
AUTORES: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLICAÇÃO: 2016, FONTE: APPLIED SURFACE SCIENCE, VOLUME: 379
INDEXADO EM: 
WOS
WOS106
TÃTULO: Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance Full Text
AUTORES: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato ; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, NÚMERO: 6
AUTORES: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato ; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, NÚMERO: 6
107
TÃTULO: Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
AUTORES: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato ; Rodrigo Martins; Beatrice Fraboni;
PUBLICAÇÃO: 2016, FONTE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, NÚMERO: 7
AUTORES: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato ; Rodrigo Martins; Beatrice Fraboni;
PUBLICAÇÃO: 2016, FONTE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, NÚMERO: 7
108
TÃTULO: Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors Full Text
AUTORES: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato ;
PUBLICAÇÃO: 2016, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 109, NÚMERO: 5
AUTORES: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato ;
PUBLICAÇÃO: 2016, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 109, NÚMERO: 5
109
TÃTULO: Novel Linear Analog-Adder Using a-IGZO TFTs
AUTORES: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato ; Rodrigo Martins; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
AUTORES: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato ; Rodrigo Martins; Pedro Barquinha;
PUBLICAÇÃO: 2016, FONTE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
110
TÃTULO: A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs
AUTORES: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLICAÇÃO: 2016, FONTE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
AUTORES: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLICAÇÃO: 2016, FONTE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
