Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
61
TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
INDEXED IN: 
WOS
WOS62
TITLE: Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance Full Text
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
63
TITLE: Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
AUTHORS: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato; Rodrigo Martins; Beatrice Fraboni;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 7
AUTHORS: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato; Rodrigo Martins; Beatrice Fraboni;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 7
64
TITLE: Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors Full Text
AUTHORS: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 5
AUTHORS: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 5
65
TITLE: Novel Linear Analog-Adder Using a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
66
TITLE: A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs
AUTHORS: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
AUTHORS: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
INDEXED IN: 
Scopus 
CrossRef
Scopus CrossRef67
TITLE: Basic Analog and Digital Circuits with a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
68
TITLE: Validating silicon polytrodes with paired juxtacellular recordings: method and dataset
AUTHORS: Joana P Neto; Gonalo Lopes; Joao Frazao; Joana Nogueira; Pedro Lacerda; Pedro Baiao; Arno Aarts; Alexandru Andrei; Silke Musa; Elvira Fortunato; Pedro Barquinha; Adam R Kampff;
PUBLISHED: 2016, SOURCE: JOURNAL OF NEUROPHYSIOLOGY, VOLUME: 116, ISSUE: 2
AUTHORS: Joana P Neto; Gonalo Lopes; Joao Frazao; Joana Nogueira; Pedro Lacerda; Pedro Baiao; Arno Aarts; Alexandru Andrei; Silke Musa; Elvira Fortunato; Pedro Barquinha; Adam R Kampff;
PUBLISHED: 2016, SOURCE: JOURNAL OF NEUROPHYSIOLOGY, VOLUME: 116, ISSUE: 2
69
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
70
TITLE: Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films Full Text
AUTHORS: Haeberle, J; Machulik, S; Janowitz, C; Manzke, R; Gaspar, D; Barquinha, P; Schmeisser, D;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 10
AUTHORS: Haeberle, J; Machulik, S; Janowitz, C; Manzke, R; Gaspar, D; Barquinha, P; Schmeisser, D;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 10
